韩国科学技术研究院(KAIST)与成均馆大学联合研究团队成功开发出一种新型半导体结构,使电流在二维材料中能够无阻碍地流动。这一成果突破了长期困扰芯片行业的“电气瓶颈”,有望大幅降低下一代半导体器件的接触电阻,为人工智能芯片、超低功耗半导体等领域提供关键技术支撑。
韩国科学技术研究院(KAIST)与成均馆大学联合研究团队成功开发出一种新型半导体结构,使电流在二维材料中能够无阻碍地流动。这一成果突破了长期困扰芯片行业的“电气瓶颈”,有望大幅降低下一代半导体器件的接触电阻,为人工智能芯片、超低功耗半导体等领域提供关键技术支撑。
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