SK海力士据报推进EUV工艺 引入新材料PSM

格隆汇
Aug 11
据韩媒,SK海力士正致力于推进其极紫外光刻(EUV)技术,以实现下一代DRAM的量产。公司于去年首次推出高数值孔径(High-NA)EUV设备,并于今年全面启动相关技术的研发。据悉,该公司已全面开始引入相移掩模(PSM)等新型材料,以提升EUV光刻性能。

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