金吾财讯 | 存储概念美股盘前全线扬升，截至发稿，慧荣科技（SIMO）涨3.01%，闪迪（SNDK）涨5.44%，希捷科技（STX）涨3.09%，西部数据（WDC）涨4.13%，美光科技（MU）涨3.29%，Rambus（RMBS）涨1.65%，SK海力士（SKHY）涨4.22%。消息面上，SK集团董事长崔泰源近日接受媒体线下采访时再次强调了存储需求的爆发式增长，并预计明年将出现最严重的“存储荒”。美国TMT投研机构New Street Research新近预计称，即便到2030年之后，存储需求仍将以每年约15%的惊人速度增长，而历史上这一增速大约只有10%。该机构分析师Pierre Ferragu指出，不同于价格剧烈波动的DRAM，HBM具备更强的抗周期性，理应享有估值溢价。HBM在技术上更为复杂，相比传统DRAM要消耗多得多的晶圆产能，并且涉及先进封装工艺。这意味着，新增HBM产能并非易事。AI不断推高HBM需求，可HBM的生产限制了厂商供应传统存储芯片的能力。而这正是当前这轮存储芯片短缺可能比历史上任何一轮周期都持续更久的重要原因之一。
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