SemiAnalysis:NAND制造正由钨转钼,泛林集团预期将率先受惠

格隆汇
Yesterday
半导体产业研究机构SemiAnalysis发布文章指出,当3D NAND堆叠层数突破约300层后,传统以钨制作的字线逐渐面临物理与制程限制,钼可能成为高层数NAND不可避免的材料选择。分析指出,相较于钨,钼在高层数3D NAND结构中具有三项关键优势:首先,钼的电阻较低,有助于提升记忆体读写速度;其次,钼制程不需要使用氟基化学工艺;第三,钼在高深宽比结构中的填充能力较佳。 SemiAnalysis预估,钼在全球NAND总产能中的占比,将从2025年的个位数中段百分比,提升至2027年约30%。估计,光是2027年一年,NAND钼沉积设备市场规模就可能超过10亿美元。若后续DRAM与逻辑芯片也逐步采用钼相关制程,整体钼沉积设备市场到2030年可能进一步成长至每年约20亿美元。 设备供应商方面,泛林集团预期将率先受惠,东京电子则紧随其后。应用材料、阿斯麦以及北方华创则可能更多受惠于后续DRAM及逻辑芯片导入钼制程所带来的需求。

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