IT之家 8 月 25 日消息，科技媒体 Tom's Hardware 昨日（8 月 24 日）发布博文，报道称京都大学研究团队研发出新型碳化硅（SiC）晶体管，采用标准离子注入工艺制造，可在 600℃（873 K）下工作。
IT之家援引博文介绍，该晶体管采用商业芯片工厂普遍使用的“离子注入”（ion implantation）工艺打造，相关成果于 8 月 17 日发表在《APL Electronic Devices》。
研究团队选择“结型场效应晶体管”（JFET）结构，并将栅极置于沟道下方，形成底栅（bottom-gate）布局。离子注入过程中，部分掺杂原子会沿晶体通道深入目标区域之外，形成“沟道效应”尾部。
传统顶栅结构难以补偿这一影响，导致设计阈值电压与实测值相差超过 2 V。底栅结构可捕获偏离预定深度的掺杂原子，让该偏差在 400℃ 下缩小至 0.1 V 以内。
该科研团队为了减少高温漏电，团队还加入“双阱”（double-well）隔离结构。该结构通过 pn 结隔离单个器件，避免依赖下方半绝缘碳化硅衬底。
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