三星正为英伟达开发8层HBM4E

智通财经
Aug 31
【三星正为英伟达开发8层HBM4E】据韩国媒体报道,三星电子正配合英伟达要求开发8层第七代高带宽存储器,较原计划的12层、16层方案显著降低堆叠高度,英伟达提出的速度规格为17-18Gbps,较三星初期HBM4E 14.4Gbps的样品速度高出约20%,该产品据报将用于NVHBM。

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