消息称铠侠计划以升级版NAND替代部分DRAM

格隆汇
Sep 04
据市场消息,铠侠近日举行了半导体存储器及其他技术的技术说明会。铠侠计划通过专为人工智能工作负载设计的CXL模组提高NAND闪存的处理速度,取代部分DRAM。据悉,CXL模组能将数据读取所需时间缩短至传统产品的1/10以下,凭借高速读取数据,其性能可更加接近DRAM。铠侠指出,若将部分DRAM换成CXL模组,容量能提高至2倍、性能提升3成。

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