据首尔经济日报,三星电子将与全球最大的光刻设备制造商ASML共同开发高数值孔径(High-NA)极紫外(EUV)光刻技术

智通财经
Sep 09
据首尔经济日报,三星电子将与全球最大的光刻设备制造商ASML共同开发高数值孔径(High-NA)极紫外(EUV)光刻技术。三星正参与一项旨在推动行业标准转变的工作,即将自20世纪80年代以来一直使用的6英寸光掩模版转向12英寸版本,并力争率先基于高NA EUV设备建立DRAM量产体系。三星计划从2028年开始将高NA EUV设备应用于DRAM生产,随后进一步将这项技术扩展至1.4纳米先进逻辑工艺,以推动其晶圆代工业务发展。扩大掩模版尺寸旨在弥补EUV技术的局限。高NA EUV的数值孔径比传统EUV高66%,能够形成更加精细的电路图案。将目前使用的6英寸掩模版替换为12英寸掩模版,可以提高晶圆厂生产效率并降低芯片制造成本。

Disclaimer: Investing carries risk. This is not financial advice. The above content should not be regarded as an offer, recommendation, or solicitation on acquiring or disposing of any financial products, any associated discussions, comments, or posts by author or other users should not be considered as such either. It is solely for general information purpose only, which does not consider your own investment objectives, financial situations or needs. TTM assumes no responsibility or warranty for the accuracy and completeness of the information, investors should do their own research and may seek professional advice before investing.

Most Discussed

  1. 1
     
     
     
     
  2. 2
     
     
     
     
  3. 3
     
     
     
     
  4. 4
     
     
     
     
  5. 5
     
     
     
     
  6. 6
     
     
     
     
  7. 7
     
     
     
     
  8. 8
     
     
     
     
  9. 9
     
     
     
     
  10. 10