IT之家 9 月 11 日消息，参考路透社此前报道，SK 海力士在一份声明中表示，该企业目标在 2028 年将 High NA（高数值孔径）EUV 光刻图案化工艺应用于 DRAM 的大规模生产。
ASML 在当地时间本月 8 日宣布与台积电、三星电子、英特尔合作，推动 High NA EUV 生态系统转向面积更大的 12 英寸掩膜（光罩）。SK 海力士正评估是否加入这一联盟。
IT之家注意到，三星电子在同时新闻稿中确认计划在 2028 年将 High NA EUV 技术用于先进 DRAM 内存的大规模生产；美光则曾表示，计划为第 7 代 10nm 级 DRAM 工艺 1δ (1-delta) 导入最新一代的 EUV 光刻设备。
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