新浪科技讯 9月21日上午消息，长鑫存储宣布第五代DRAM技术平台（简称“G5平台”）实现量产，同时展出基于该平台打造的大容量LPDDR5X新品。据悉，该平台工艺水平比肩行业顶尖量产工艺节点，是长鑫存储高端存储技术路线上的里程碑式突破。
G5平台依托创新的四重曝光技术把内存阵列的有源区半间距微缩至11.95纳米，接近全球顶尖内存量产平台制程。通过变革工艺流程、采用新材料，存储电容深宽比达45：1。开发适配DRAM工艺的高介电常数金属栅（HKMG）工艺，将G5平台核心功能区高度缩小到6762纳米。
G5微缩工艺的突破推动存储密度实现跨越式提升：每片晶圆产出裸片数量较第四代平台提升至少50%，在产品能效、成本控制上均具备显著优势。
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