ChainCatcher 消息，据 ZDNet Korea 10 月 12 日报道，三星电子正扩大次世代 NAND 闪存 zNAND 的应用范围，并规划在已公开的 zNAND-O 之外，将产品细分为 zNAND-O、zNAND-T、zNAND-I 共 3 款。报道称，三星电子尚未正式宣布后两款产品，但业界了解到相关方案已进入初期开发，以对应 AI 基础设施中定制化存储需求增加的情况。
zNAND-O 面向端侧 AI。与传统引线键合不同，该方案通过硅通孔将 NAND 垂直堆叠 4 层或 8 层，缩短数据传输路径，并提升速度与能效。三星电子已于今年 8 月在美国存储器相关活动中首次公开展示 zNAND-O 模型。
zNAND-T 侧重吞吐量，面向高容量、高性能 AI 数据中心，同样以垂直堆叠和硅通孔扩大带宽，业界将其称为高带宽闪存。zNAND-I 侧重提升每秒输入输出次数，用于 AI 推理中对键值缓存等小容量临时数据的频繁处理。报道同时提到，SK 海力士也在开发 AIN P、AIN D、AIN B 等 AI NAND 产品系列。
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