三星将采用台积电技术为Nvidia生产下一代内存芯片

路透中文
Oct 18
<a href="https://laohu8.com/S/SMSN.UK">三星</a>将采用<a href="https://laohu8.com/S/TSM">台积电</a>技术为<a href="https://laohu8.com/S/NVDA">Nvidia</a>生产下一代内存芯片--韩国报纸

路透首尔10月18日 - 据《首尔经济日报》周日报道,三星电子 005930.KS 将采用台积电 2330.TW 的3纳米工艺,为Nvidia(辉达/英伟达)NVDA.O 下一代定制高带宽内存(HBM)芯片生产基底裸片 。

据该报道称,此举将标志着三星首次在HBM制造阶段与台积电展开合作。

  • 该报援引业界消息人士的话称,Nvidia已要求三星、SK海力士 000660.KS 和美光科技 MU.O 采用台积电的工艺制造NVHBM基底裸片,并采用第六代DRAM技术制造核心裸片。

  • 据该公司称,今年8月发布的NVHBM将Nvidia的定制内存控制器集成到基底裸片中,旨在统一多家内存供应商的实施方式。

  • 据《首尔经济日报》报道,三星在经过内部评估后接受了Nvidia的要求,但计划继续采用自主生产模式来生产标准HBM以及面向其他客户的定制产品。

  • 该报还援引一位不愿透露姓名消息人士的话称,三星正在评估,如果需求超过台积电的产能,是否可由自身晶圆代工业务生产NVHBM基底裸片。

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