路透首尔10月18日 - 据《首尔经济日报》周日报导,三星电子 005930.KS 将采用台积电 2330.TW 的3纳米工艺,为Nvidia(辉达/英伟达)NVDA.O 下一代定制高带宽内存(HBM)芯片生产基底裸片 。
据该报导称,此举将标志着三星首次在HBM制造阶段与台积电展开合作。
路透首尔10月18日 - 据《首尔经济日报》周日报导,三星电子 005930.KS 将采用台积电 2330.TW 的3纳米工艺,为Nvidia(辉达/英伟达)NVDA.O 下一代定制高带宽内存(HBM)芯片生产基底裸片 。
据该报导称,此举将标志着三星首次在HBM制造阶段与台积电展开合作。
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