快科技10月19日消息,随着人工智能市场对高带宽内存(HBM)的需求不断攀升,英伟达正在推动一项前所未有的供应链整合计划。 根据最新消息,英伟达为下一代AI加速器开发的定制高带宽内存NVHBM,将促使长期竞争的三星电子和台积电展开合作,共同打造基于3纳米工艺的基底芯片(Base Die)。 报道称,三星在HBM产品开发上历来采用“交钥匙”模式,即核心存储芯片(Core Die)与基底芯片均由...
Source Link快科技10月19日消息,随着人工智能市场对高带宽内存(HBM)的需求不断攀升,英伟达正在推动一项前所未有的供应链整合计划。 根据最新消息,英伟达为下一代AI加速器开发的定制高带宽内存NVHBM,将促使长期竞争的三星电子和台积电展开合作,共同打造基于3纳米工艺的基底芯片(Base Die)。 报道称,三星在HBM产品开发上历来采用“交钥匙”模式,即核心存储芯片(Core Die)与基底芯片均由...
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