10月20-22日上海黄浦江畔，2026可持续全球领导者大会再度来袭。诺奖、图灵奖得主现场讲述科技未来与趋势，更有“解救”焦虑、内卷时代的网红教授——麦克法兰与项飙现场对话！ 名额有限，手慢无。让我们共赴可持续之约！【点击报名】
韩国《首尔经济日报》援引未具名业内人士消息报道，三星电子计划使用台积电3纳米工艺，为英伟达下一代定制高带宽内存生产基底裸片。
英伟达已要求三星、SK海力士和美光，在其定制NVHBM产品的基底裸片生产上统一采用台积电3纳米工艺。
英伟达希望各供应商统一制造流程，保障产品性能一致。
此举是三星首次在HBM制造环节与台积电开展合作。
NVHBM基于第七代HBM4E架构开发。
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