ChainCatcher 消息，据 ZDNet Korea 10 月 20 日援引半导体业界报道，已被英伟达实质收购的 AI 芯片公司 Groq 正推进在下一代芯片中引入 DRAM 三维堆叠封装，以替代速度快但容量较小的 SRAM 方案。Groq 由前谷歌 TPU 设计者 Jonathan Ross 于 2016 年创立，报道称该公司去年被英伟达以迂回方式收购。
报道称，Groq 正在评估的方案为 3DS，即通过硅通孔把 DRAM 芯片垂直连接的高容量封装。三维封装可将多颗裸片垂直堆叠并作为一颗芯片工作，相较平面方案缩小面积、提高电力效率。3DS 与 HBM 都使用硅通孔，但 HBM 侧重传输速度，3DS 维持既有 DRAM 接口并聚焦容量扩张。匿名业界人士表示，Groq 计划在下一代芯片采用三维封装，堆叠的是 DRAM 而非 SRAM；另一名人士称，市场需求转向更大容量芯片，Groq 因此选择在容量上更有优势的 DRAM。
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