金吾财讯 | 美光（MU）宣布放弃4F² DRAM技术方案，将重点研发3D DRAM，以此作为下一代技术革新方向。三星、SK海力士（SKHY）以及中国长鑫存储等同行企业，则仍在推进4F²技术研发。Wedbush分析师Matt Bryson在投资者报告中表示，美光认为4F²存在两大根本性缺陷：一是发展到一定阶段后不存在进一步微缩演进路径；二是存储密度由电容器间距决定，而非存储单元布局。即便在早期工艺节点，4F²技术也具备更高复杂度，成本也更为高昂。Wedbush方面认可美光的这一战略抉择。Bryson指出，美光在技术迭代过程中设计迭代进度领先多数同行，已经从大幅落后韩日存储厂商，成长为DRAM与NAND领域均可提供行业顶尖水准产品的企业。这一转变过程中，美光曾多次选择不同技术路线并落地执行，包括早期在NAND产品上采用CMOS阵列下技术，美光在该技术上取得的成果显著优于同行，后续又转向EUV光刻技术。
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