Office Location:
National Engineering Laboratory Building,11th Floor, Block B,Nanshan District,Shenzhen,Guangdong Province,China
Introduction:
Shenzhen Basic Semiconductor Co., Ltd. is a pioneering Chinese enterprise in the third-generation semiconductor sector, specializing in the research, development, and industrialization of silicon carbide power devices. Headquartered in Shenzhen, the company maintains R&D centers and manufacturing facilities in Beijing, Shanghai, Wuxi, Hong Kong, and Nagoya, Japan. It boasts an internationally diverse R&D team, with core members holding doctoral degrees from prestigious domestic and international institutions such as Tsinghua University, the Chinese Academy of Sciences, and the University of Cambridge in the UK.
Basic Semiconductor has mastered key silicon carbide technologies, with R&D spanning critical links across the industry chain—including chip design, wafer fabrication, packaging and testing, and driver‑application development. Its core product portfolio comprises silicon carbide diodes and MOSFET chips, automotive‑grade and industrial‑grade silicon carbide power modules, and power‑device driver ICs, serving hundreds of global customers in sectors such as electric vehicles, renewable energy storage, rail transit, industrial control, and smart grids.
The company has undertaken numerous national R&D and industrialization projects sponsored by China's Ministry of Industry and Information Technology, the Ministry of Science and Technology, as well as Guangdong Province and Shenzhen Municipality. It co‑established the Third‑Generation Semiconductor Materials and Devices R&D Center with the Shenzhen Tsinghua Research Institute, is a shareholder of the National 5G Mid‑ and High‑Frequency Device Innovation Center, and has been approved as both the Third‑Generation Semiconductor Collaborative Innovation Center under the China Association for Science and Technology's Industry–University–Research Integration Technology Innovation Service System and the Guangdong Provincial Engineering Technology Research Center for Silicon Carbide Power Devices. The company has also received accolades including the China Patent Excellence Award, the Shenzhen Patent Award, the 2020 "Innovation China" Rising Star Enterprise award, the "China Chip" Outstanding Technological Innovation Product Award, and first prize in the professional category of the China Innovation and Entrepreneurship Competition.